PART |
Description |
Maker |
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
|
Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
|
6AM12 |
Silicon N-channel/p-channel Complementary Power MOS Fet Array
|
Renesas
|
BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
BDX33B BDX34C BDX34B ON0204 BDX33C |
From old datasheet system 10 AMPERE COMPLEMENTARY Darlington Complementary Silicon Power Transistors
|
Motorola Inc ON Semiconductor Motorola, Inc
|
TC58FVM5B2 TC58FVM5B3 TC58FVM5T2AFT65 TC58FVM5B2AF |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
2N6052 2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 12 AMPERE COMPLEMENTARY
|
ON Semiconductor
|
3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
TC55NEM216ASTV55 |
(TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|